Ji Ung Lee

Research Areas

• Carbon nanotube electronics and optoelectronics
• Fundamental properties of carbon nanotubes and their growth mechanism
• Nano-bio applications
• Chem/bio sensors
• Tera hertz generation and detection
• Photovoltaics with nanostructured materials
• Si-based electronics

Professional Experience

• General Electric Global Research Center, Niskayuna, NY (1999-2007): Senior Scientist and Project Leader; research in carbon nanotube electronics, photonics and sensors, and nanobio applications
• Micron Display, Boise, ID (1997-1999): Process Integration Engineer for field emission displays
• Argonne National Laboratory, Argonne, IL (1996-1997): Postdoctoral appointment, Materials Science Division

Professional Achievements

• Inventor of the world's first carbon nanotube p-n junction diode (subject of 2 cover articles in App. Phys. Lett. that were featured in MSNBC, CNN, Physics Today, Popular Mechanics, Nature News, Small Times, Laser Focus World, PhysOrg.com and other publications)
• World's first demonstration of photovoltaic effect in carbon nanotube diodes
• Expert in amorphous Si devices and a-Si digital x-ray detectors
• Inventor of several novel cold cathode field emitters for flat panel displays and x-ray generation
• One of the first to demonstrated intrinsic Josephson effects in high temperature superconductors, and coherent magnetic vortex motion

Awards and Honors

• Recipient of the NASA Tech Briefs Nano 50 Award for the Switchable Nanotube Diodes (Boston, MA- Nov. 10-11, 2005)
• Recipient of the 2004 Hull Award, the highest individual award given to the most outstanding young scientist at GE Global Research
• 2004 GE Publication of the Year award

Recent Invited Talks

SUNY Brain Network of Excellence Workshop 2014, CNSE Capabilities for Neural Probes; SUNY Buffalo, Clinical Translational Research Center, December 5-6, 2014, Buffalo, NY

ENGE 2014, Logic Devices with Graphene p-n Junctions: New Electron-Optics Devices , November 16-18, 2014, Jeju, South Korea.

CMOS Emerging Technologies Research, Logic with GPNJs, July 6-8, 2014, MINATEC Grenoble, France.

Armed Forces Communications Electronics Association (AFCEA), Command, Control, Communications, Cyber and Intelligence (C41) Technology Review Days and Exposition, Reconfigurable Logic with GPNJs, June 10-11, 2014. Radisson Hotel Conference Center, Utica, NY

Electrochemical Society (ECS) 225, Orlando, FL, Logic with graphene PNJunctions, May 11-15, 2014.

Sematech Post CMOS Workshop Graphene PN Junctions: New Electron-optics Devices – Washington DC, December 8, 2013.

Albany Nanotech, Graphene PN Junctions, Albany, NY, August 2, 2013.

IBM Alliance, Carbon Based P-N Junctions: Fundamentals to Applications, July 30, 2013, Albany, NY

CMOS Emerging Technologies Research 2013, Graphene pn Junction Devices; July 17-19, 2013, Whistler, British Columbia, Canada.

2013 Device Research Conference, “Graphene PN Junctions for Electron-Optics Devices” June 23-26, 2013, U. of Notre Dame, Notre Dame, IN.

2012 SPIE Optics and Photonics, Graphene pn junction devices: An Overview, August 12-16, 2012, San Diego, CA.

221st Electrochemical Society Meeting, “Optical and Electrical Properties of Carbon Nanotube PN Diodes”, May 6-10, Seattle, WA, USA.

221st Electrochemical Society Meeting, “Graphene PN Junctions”, May 6-10, Seattle, WA, USA
International Symposium on Assessing the Economic Impact of Nanotechnology, “Measuring Economic Impact of Nanotechnology in Electronics – The New York State Investment Strategy”, March 27-28, 2012, AAAS, Washington, DC (In place of Michael Fancher).

INDEX: Graphene PN Junction Devices, Gov’t Microcircuit Applications and Critical Technology Conference (GOMAC) 12, March 19-22,Las Vagas, NV.

Fabrication and Characterization of Graphene PN Junction Devices, American Vacuum Society 58th International Symposium and Exhibition, October 30-Nov. 4, 2011, Nashville, Tennessee (Presented by Surajit Sutar-post doc).

7th International Nanotechnology Conference on Communication and Cooperation, Albany, NY, “INDEX Technical and Organizational Overview”, May 16-19, 2011.

219th Electrochemical Society, “Probing Band Gap States in Carbon Nanotubes” Montreal, Canada, May 2-6, 2011.

Carbon Based P-N Junction Devices, New York State Sectional Meeting of the American Physical Society, Albany, NY, April 8-9, 2011. (Substitute talk for Ann Swan).

7th International Symposium on Advanced Gate Stack Technology, Sematech Symposium, “What do we really know about carbon nanotubes and why high-k dielectric matters”, Troy, NY, September 29-October 1, 2010.

Center for Nanotubes and Nanostructured Composites, Sungkyunkwan University, “Optical Spectroscopy of Carbon Nanotube Diodes”, Suwon, Korea, August 25, 2010.

IUMR-ICEM 2010 Conference, “Fabrication and Characterization of Graphene PN Junction Devices, Seoul, Korea, August 24, 2010.

Sandia National Laboratory, Seminar on “Optical Spectroscopy of Carbon Nanotube PN Diodes”, Livermore, CA, July 13, 2010.

Stanford University, Center for Integrated Systems, Seminar on “Graphene Veselago Device and Bilayer Graphene PN Junctions” Stanford, CA, July 12, 2010. 

217th Electrochemical Society, “Probing Defects in Carbon Nanotubes Through Multi-Gated Structures” Carbon Nanotubes and Nanostructures: Fundamental Properties, Vancouver, BC, Canada, April 27, 2010.

217th Electrochemical Society, “Graphene Veselago Device: Fabrication and Characterization of Graphene p-n Junctions” Graphene Interfaces and Junctions, Vancouver, BC, Canada, April 26, 2010.

IBM T.J. Watson Research Center, seminar on “INDEX Graphene Effort and Graphene P-N Junction Devices” Yorktown Heights, NY, January 5, 2010.

Joint Workshop on Advanced Materials Research for Nanotechnology, joint between CNSE and National Institute for Materials Science (NIMS), Advanced Industrial Science and Technology (AIST) and the University of Tsukuba, all of Japan, “Graphene and Carbon Nanotube p-n Junction Devices” Albany, NY, December 10-11, 2009.

Materials Science and Engineering Department, University of Wisconsin-Madison, “Carbon Nanotube and Graphene p-n Junction Devices”, Madison, WI, October 8,9 , 2009

3rd Workshop on Nanotube Optics and Nanospectroscopy, “Optical Spectroscopy of Carbon Nanotube Diodes”, Sendai, Japan, June 7-10, 2009.

215th Electrochemical Society Meeting, Carbon Nanotubes and Nanostructures: Applications and Devices, “Fundamental Probe of Carbon Nanotubes Using Multi-gated Structures” San Francisco, CA, May 24-29, 2009.

2009 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics, “Overview of Carbon Based Nanoelectronics”, University at Albany, College of Nanoscale Science and Engineering, Albany, NY., May 11-14, 2009.

NSF sponsored 6th US-Korea Forum on Nanotechnology: Nanoelectronics and its Integration with Applications, “Optical Spectroscopy of Carbon Nanotube p-n Diodes” Las Vegas, NV, April 27-29, 2009.

Modern Optics in Spectroscopy, Massachusetts Institute of Technology, “Optical Spectroscopy of Carbon Nanotube p-n Diodes”, Cambridge, MA., March 3, 2009.

Seminar: Dept. of Materials Science and Engineering, Gwangju Institute of Science and Technology, “Carbon Nanotube p-n Diodes” November 19-20, 2008, Gwangju, South Korea.

55th American Vacuum Society Meeting, Manufacturing Science and Technology: Beyond CMOS program: “Excitronics: Excitonic Circuits for post-CMOS Electronics”, October 19-24, 2008, Boston, MA.

NSF sponsored French-American Young Engineering Scientists Symposium (YESS 2008), “Excitronics: Excitonic Circuits for post-CMOS Electronics”, July 7-9, 2008, Washington DC

213th Electrochemical Society Meeting, Carbon Nanotubes and Nanostructures: Applications and Devices, “Carbon Nanotube p-n Diodes” Phoenix, Az., May 20, 2008.

213th Electrochemical Society Meeting, Carbon Nanotubes and Nanostructures: Fundamental Properties and Processes, “Probing Excitonic Properties of Individual Nanotube p-n Diodes”, Phoenix, Az., May 19, 2008.

Physics Colloquium, Lehigh University, “Carbon Nanotube p-n Junction Diodes”, April 3, 2008, Bethlehem, PA.

FENA/ONAMI Workshop: Nanoelectronics for High Performance Computing and Information Processing, UCLA, November 19-20, 2007.

2007 IEEE Lasers and Electro Optical Society (LEOS - Annual Meeting), Orlando, FL, October 21-25, 2007.

6th Annual Center for Optical Technologies, Lehigh University, Bethlehem, PA, October 8-9, 2007.

Corning Inc., Corning, NY, August 3, 2007.

IEEE Lasers and Electro Optical Society (LEOS - Summer Topical Meetings on Biophotonics), Portland, Oregon, July 23-25, 2007

2nd Workshop on Nanotube Optics and Nanospectroscopy, Ottawa, Canada, June 4-7, 2007

Brookhaven National Laboratory, Center for Functional Nanomaterials, Upton, NY, April 30, 2007

Columbia University, Nanoscale Science and Engineering Center, New York, NY, April 11, 2007

American Physical Society - March Meeting, Denver, CO, March 5-9, 2007

University of Montreal, Montreal, Canada, February 26, 2007

Printed Electronics USA 2006, Phoenix, AZ, December 5-6, 2006

American Chemical Society, Presidential Event, San Francisco, Ca., September 10-13, 2006

2006 IEEE Electron Device Conference: Lester Eastman Conference on High Performance Devices, Cornell University, August 2-4, 2006

NSF/ONR Review of North American R&D on Carbon Nanotube Manufacturing and Applications, NSF, Arlington, VA, June 2, 2006

GE Power Electronics Symposium, "Reconfigurable Carbon Nanotube Switch", GE Global Research, September 1-2, 2005

Cornell University, Center for Nanoscale Systems Symposium: Nanoelectronics - From Discovery to Systems, "Carbon Nanotube p-n Junction Diodes", April 6, 2005

Boston University, Center for Nanoscience and Nanobiotechnology seminar, March 10, 2005

12th NSF Workshop on Materials Science and Nanotechnology, Broomfield, CO, October 28-31, 2004

International Electronics Packaging Symposium, National Trends in Small Scale Systems and Microelectronics Packaging, Binghamton University and GE Global Research, GE Global Research, Niskayuna, NY, October 19-20, 2004

2004 IEEE-Nano, Munich, Germany, Plenary Talk on Carbon Nanotube pn junction diodes, August 16-19, 2004

Recent Publications

Disorder DOS in supported graphene, J. Appl. Phys. (2014), D. Sinha and J. U. Lee,

Ideal Graphene/Silicon Schottky Junctions, Nano Lett 14, 4660 (2014), D. Sinha, J.U. Lee,

Florence J. Nelson, Juan-Carlos Idrobo, John D. Fite, Zoran L. Mišković, Stephen J. Pennycook,∥ Sokrates T. Pantelides,⊥,# Ji Ung Lee,† and Alain C. Diebold*,† Electronic Excitations in Graphene in the 1–50 eV Range: The π and π + σ Peaks Are Not Plasmons, NanoLett, 2014

Substrate dielectric effects in graphene field effect transistors, Zhaoying Hu, Dhiraj Sinha, Michael Liehr, and Ji Ung Lee, J. App. Phys. 115, 194507 (2014).

Yong Q. An,1, J. E. Rowe, Daniel B. Dougherty, Ji Ung Lee, and Alain C. Diebold, Optical second-harmonic generation induced by electric current ingraphene on the substrates of Si and SiC, Phys. Rev. B, 89, 115319 (2014).

Intrinsic tolerance to total ionizing dose in gate-all-around MOSFETs, E. Comfort, M. Rodgers, W. Allen, S. Gausepohl, E.X. Zhang, M. Alles, H. Hughes, P. McMarr, and J.U. Lee, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 60, NO. 6, DECEMBER 2013, 4483-4487.

Quantum Efficiency and Capture Cross Section of First and Second Excitonic Transitions of Single-Walled Carbon Nanotubes Measured through Photoconductivity, Argyrios Malapanis, Vasili Perebeinos, Dhiraj Prasad Sinha, Everett Comfort, and Ji Ung Lee, Nano Lett. 13, 3531–3538 (2013).

Characterization of metal oxide layers grown on CVD graphene, A. Matsubayashi, J. Abel, D.P. Sinha, J.U.Lee and V.P. LaBella, J. Vac. Sci. Technol. A, 31, 021506 (2013).

Enhanced optical second harmonic generation from the current-biased graphene/SiO2/Si structure, Yong Q. An, Florence Nelson, Ji Ung Lee and Alain Diebold, Nano Lett 13, 2104-2109, 2013.

Single Cell In-Vivo Carbon Nanotube Device with Multimodal Sensing Potential Alexandra Scavelli, Abhishek Gottipati, Everett Comfort, Sabarinath Jayaseelan, Thomas Murray, Michael Rizzolo, Scott Tenenbaum and Ji Ung Lee, AIP Advances 3, 032122 (2013)

Characterization of metal oxide layers grown on CVD graphene, A. Matsubayashi, J. Abel, D.P. Sinha, J.U. Lee and V.P. LabBella, J. Vac. Sci. Technol. A 31 (2013).

Manifestation of chiral tunneling at a tilted graphene p-n junction, R.N. Sajjad, S. Sutar, J.U. Lee and A.W. Ghosh, Phys. Rev. B 86, 155412 (2012).

Angle-dependent carrier transmission in graphene p-n junction, S. Sutar, E.S. Comfort, J. Liu, T. Taniguchi, K. Watanabe, and J.U. Lee, Nano Lett 12, 4460 (2012). 

Enhanced ultraviolet response using graphene electrodes in organic solar cells, Zhouying Zhao, John D. Fite, Pradeep Haldar, and Ji Ung Lee, Appl. Phys. Lett. 101, 063305 (2012).

Single Exciton Quantum Logic Circuits, Ji Ung Lee, IEEE J. of Quantum Electronics, Vol 48, No. 9, pp.1159-1164, September 2012.

Parasitic capacitance removal of sub-100nm p-MOSFETs using capacitance-voltage measurements, D.R. Steinke, J. Piccirillo, S. Gausepohl, S. Vivekand, M. Rodgers, and Ji Ung Lee, Solid State Electronics, Vol. 68, pp 51-55, Feb. 2012.

Observation of the Urbach Tail in the effective density of states in carbon nanotubes, David A. Jones and Ji Ung Lee, Nano Lett. 11, 4176 (2011).

Current-Induced Cleaning of Adsorbates in Single-Walled Carbon Nanotube Diodes, A. Malapanis, E. Comfort, and Ji Ung Lee, Appl. Phys. Lett. 98, 263108 (2011).

Creation of individual defects at extremely high proton fluences in carbon nanotube p-n diodes, Everett S. Comfort, Matthew Fishman, Argyrios Malapanis, Harold Hughes, Patrick McMarr, Cory D. Cress, Hassaram Bakhru and Ji Ung Lee, IEEE Trans Nucl. Sci., vol 58, 2898-2903 (2011).

Measuring Carbon Nanotube Band Gaps through Leakage Current and Excitonic Transitions of Nanotube Diodes, A. Malapanis, D. A. Jones, E. Comfort and J.U. Lee, NanoLett, 11, 1946 (2011). 

Spectroscopy of strongly localized excitons and band gap states in semiconducting single-walled carbon nanotubes, E.S. Comfort, D.A. Jones, A. Malapanis, Z.R. Robinson, M.T. Fishman, and J.U. Lee, Phys. Rev. B (Rapid Communications), 83, 081401(R), 2011 (Featured in Virtual Journal of Nanoscale Science and Technology, Vol. 23, Iss. 7, Feb. 21, 2011).

Optical properties of large-area polycrystalline chemical vapor deposited graphene by spectroscopic ellipsometry, F. J. Nelson, V. K. Kamineni, T. Zhang, E. S. Comfort, J. U. Lee, and A. C. Diebold, Appl. Phys. Lett. 97, 253110 (2010).

Reconfigurable multi-function logic based on graphene P-N junctions., Sansiri Tanachutiwat, Ji Ung Lee, Wei Wang, Chun Yung Sung, IEEE/ACM Design Automation Conference (DAC), pp. 883-888, June 2010.

Bandgap renormalization in SWNTs: Origin of the ideal diode behavior in carbon nanotube p-n structures, Ji Ung Lee, Phys. Rev. B 75, 075409 (2007)

Direct probe of excitonic and continuum transitions in the Photocurrent Spectroscopy of Carbon Nanotube pn Diodes (Ji Ung Lee, Peter J. Codella, and Matthew Pietrzykowski, Appl. Phys. Lett. 90, 053103 (2007)

Photovoltaic Effect in Ideal Carbon Nanotube Diodes, Ji Ung Lee, Appl. Phys. Lett. (Cover article, August 15, 2005)

Evolution of charge emission for amorphous silicon FETs exposed to radiation, S. Zelakiewicz, A. Couture, S. Bogdanovich, J-U Lee and G. Possin, Nuclear Instruments and Methods in Physics Research A 546 (2005), 296-299

Carbon nanotube p-n junction diodes, J. U. Lee, P. P. Gipp, and C. M. Heller Appl. Phys. Lett. 85, 145 (2004) (Cover article, July 5, 2004)

Diffusion-limited transport in the off-state of amorphous Si thin-film transistors, J. U. Lee and G. E. Possin, Appl. Phys. Lett. 82, 1302 (2003)

Performance of advanced a-Si/CsI-based flat-panel x-ray detectors for mammography, Douglas Albagli, Heather Hudspeth, George E. Possin, Ji Ung Lee, Paul R. Granfors, and Brian W. Giambattista Proc. SPIE Int. Soc. Opt. Eng. 5030, 553 (2003)

Interlayer phase correlation of the vortex system around the coupling transition in Bi2Sr2CaCu2Oy containing columnar defects Y. Tsuchiya, T. Hanaguri, H. Yasuda, A. Maeda, M. Sasase, K. Hojou, D. G. Steel, J. U. Lee, and D. J. Hofman , Phys. Rev. B 59, 11568 (1999)

Pinning effect on critical dynamics in Tl2Ba2CaCu2O8 films before and after introducing columnar defects, Jin-Tae Kim; Park, Y.K.; Park, J.-C.; Kang, W.N.; Chu, C.W.; Lim, H.R.; Kim, D.H.; Lee, J.U.; Gray, K.E.; Applied Superconductivity, IEEE Transactions on , Volume: 9, Issue: 2, June 1999 Pages: 2296-2299

Observation of coherent modes of Josephson votices in Bi2Sr2CaCu2Ox, J.U. Lee, P. Guptasarma, D. Hornbaker, A. El-Kortas, D. Hinks, and K. E. Gray, Appl. Phys. Lett. 71, 1412 (1997)

Josephson vortex dynamics in superconducting BSCCO, J.U. Lee and J.E. Nordman, Proceedings of the first RIEC International Symposium on Intrinsic Josephson Effects and THz Plasma Oscillations in High Tc Superconductors, Ed. M. Tachiki and T. Yamashita, Sendai, Japan, Feb 23-25, 1997 (Invited Paper)

Effects of damping on the dynamics of Josephson votex in Bi2Sr2CaCu2Ox, Ji Ung Lee and James E. Nordman, Physica C 277 (1997), 7-12

Josephson vortex flow in superconducting single-crystal Bi2Sr2CaCu2Ox, Ji Ung Lee, James E. Nordman, and Gert Hohenwarter, Appl. Phys. Lett. 67, 1471 (1995)

RF coupling to single crystal BSCCO under c-axis bias, Hohenwarter, G.K.G.; Laundrie, A.W.; Lee, J.U.; Beyer, J.B.; Nordman, J.E.; Applied Superconductivity, IEEE Transactions on , Volume: 5, Issue: 2, Jun 1995, Pg: 3195-3198

Low magnetic field sensitivity of c-axis transport in BSCCO (2212) single crystals, Ji Ung Lee; Hohenwarter, G.; Kelley, R.J.; Nordman, J.E.; Applied Superconductivity, IEEE Transactions on , Volume: 5, Issue: 2, Jun 1995, Pg: 2543-2546

Magnetic field sensitivity of variable thickness microbridges in TBCCO, BSCCO, and YBCO, Davidson, B.A.; Redwing, R.D.; O'Callaghan, J.; Raissi, F.; Ji Ung Lee; Burke, J.P.; Hohenwarter, G.K.G.; Nordman, J.E.; Beyer, J.B.; Liou, S.H.; Eckstein, J.; Siegal, M.P.; Hou, S.Y.; Phillips, J.M.; Applied Superconductivity, IEEE Transactions on , Volume: 4, Issue: 4, Dec. 1994 Pages: 228-235

Effects of deposition conditions on stoichiometry of off-axis RF sputtered BiSrCaCuO thin films, Yang, Y.F.; Nordman, J.E.; Lee, J.U.; Applied Superconductivity, IEEE Transactions on , Volume: 3, Issue: 1, Mar 1993 Pages: 1543-1546

Effects of Target Presputtering on Stoichiometry of Sputtered Bi-Sr-Ca-Cu-O Thin Films, Y.F. Yang, J.U. Lee, J.E. Nordman, J. of Vac. Sci. and Tech. A, Vol 10, No. 5, Sep/Oct '92

Issued Patents

8,274,205 Systems and methods for limiting are effects in field emitter arrays, Wilson, Colin and Lee, Ji Ung, September 25, 2012.

7,982,570 High performance low volume inductor and method of making same, Burdick, William, Lee, Ji Ung, and de Rooij, Michael, July 19, 2011.

7,902,736 Gated nanorod field emitter structures and associated methods of fabrication, Hudspeth; Heather Diane, Lee; Ji Ung, Corderman; Reed Roeder, Zhang; Anping, Rohling; Renee Bushey, Denault; Lauraine, Balch; Joleyn Eileen, March 8, 2011.

7,521,275 Free standing electrostatically doped carbon nanotube device and method for making same, Lee, Ji Ung; April 21, 2009.

7,378,715 Free-standing electrostatically-doped carbon nanotube device, Lee, Ji Ung; May 27, 2008.

7,329,552 Field effect transistor fabrication methods, field emission device fabrication methods, and field emission device operational methods, Lee, Ji Ung; Lee, John; Moradi, Benham; February 12, 2008.

7,326,328 Gated nanorod field emitter structures and associated methods of fabrication, Hudspeth, Heather Diane; Lee, Ji Ung; Corderman, Reed Roeder; Zhang, Anping; Rohling, Renee Bushey; Denault, Lauraine; Balch, Joleyn Eileen, February 5, 2008.

7,239,076 Self-aligned gated rod field emission device and associated method of fabrication, Lee, Ji Ung; Corderman, Reed Roeder; Huber, William Hullinger, July 3, 2007

7,226,818 High performance field effect transistors comprising carbon nanotubes fabricated using solution based processing, Malenfant, Patrick Roland Lucien; Lee, Ji-Ung; Li, Yun; Cicha, Walter Vladimir

7,145,152 Storage capacitor design for a solid state imager, Lee, Ji Ung; Albaglie, D.; Possin, G.; Hennessy, W.A; Wei, C.Y.

6,943,495 Micro electro mechanical system controlled organic LED and pixel arrays and method of using and of manufacturing same, Ma, Kelvin; Lee, Ji Ung; Duggal, Anil, Sep. 13, 2005

6,890,780 Method for forming and electrostatically-doped carbon nanotube device, Lee, Ji Ung, May 10, 2005

6,784,434 Imaging array and method for manufacturing same Hennessy, William Andrew; Albagli, Douglas; Lee, Ji Ung; Wei, Ching-Yeu, August 31, 2004

6,777,685 Imaging array and methods for fabricating same, Lee, Ji Ung, August 17, 2004

6,740,884 Imaging array and methods for fabricating same, Lee, Ji Ung; Albagli, Douglas ; Possin, George Edward; Wei, Ching-Yeu, May 25, 2004

6,710,539 Field emission devices having structure for reduced emitter tip to gate spacing, Lee, Ji Ung, March 23, 2004

6,677,709 Micro electromechanical system controlled organic led and pixel arrays and method of using and of manufacturing same, Ma, Kelvin; Lee, Ji-Ung; Duggal, Anil Raj, January 13, 2004

6,559,506 Imaging array and methods for fabricating same, Lee, Ji Ung; Possin, George Edward, May 6, 2003

6,555,402 Self-aligned field extraction grid and method of forming, Wells, David H.; Lee, Ji Ung; Wilson, Aaron R., April 29, 2003

6,552,477 Field emission display backplates, Lee, Ji Ung, April 22, 2003

6,504,170 Field effect transistors, field emission apparatuses, and a thin film transistor, Lee, Ji Ung; Lee, John; Moradi, Benham, January 7, 2003

6,464,550 Methods of forming field emission display backplates, Lee, Ji Ung, October 15, 2002

6,394,871 Method for reducing emitter tip to gate spacing in field emission devices, Lee, Ji Ung, May 28, 2002

6,391,670 Method of forming a self-aligned field extraction grid, Wells, David H.; Lee, Ji Ung; Wilson, Aaron R., May 21, 2002

6,344,378 Field effect transistors, field emission apparatuses, thin film transistors, and methods of forming field effect transistors, Lee, Ji Ung; Lee, John; Moradi, Benham, February 5, 2002