T.S. Kuan

T.S. Kuan

Professor of Physics
Department of Physics
CV113.26 KB

Contact

Physics 212
518-442-4489
[email protected]
Education
  • PhD Cornell University
  • Research Staff Member, IBM T. J. Watson Research Center (1977-1985)
  • Manager, Materials Structure and Properties, IBM T. J. Watson Research Center, (1986-1991)
  • Manager, Interconnect Materials and Modeling, IBM T. J. Watson Research Center, (1991-1995)
  • Visiting Faculty, IBM T. J. Watson Research Center, 2001-2002
  • Professor, Department of Physics, University at Albany (1995-present)

 

T.S. Kuan
About

Honors and Awards:

  • IBM Corporation Outstanding Innovation Award, 1989, for discovery of long-range order in semiconductor alloys
  • IBM Corporation Invention Plateau Award, 1991
  • American Physical Society Fellow, elected 1992
  • The University at Albany President’s Award for Excellence in Research, 2006
  • The Research Foundation of State University of New York – Research and Scholarship Award, 2007

 

Research Areas:

  • Solid state and materials physics
  • High resolution electron microscopy and diffraction

 

Current Research:

  • Mechanical properties of nanometer-thick metal and alloy films
  • Transport properties of nanometer-thick metal films and metal superlattices
  • Multi-scale computer simulations of mechanical and transport properties of nanostructures

 

Research Grants:

  • Equipment donations from IBM and JEOL USA, Inc., 1995-96
  • SRC Center for Advanced Interconnect Science and Technology, 1996 – present
  • ONR MURI, Large Area Heteroepitaxial Growth Using Compliant Substrates, 1996 – 2001
  • DARPA/MTO: Increased Functionality of Si Through Integration of SiGe Films with III-V Semiconductors for Wireless Transmitters, 2000 – 2003
  • BMDO/ONR through Emcore Co. Epitaxial Lateral Overgrowth of GaN in Large Area MOCVD Reactors, 2000 – 2002
  • DoD/DURINT, Nanoporous Templates for Large Defect Reduction in SiC and GaN, Nanocatalysis, Magnetic Clusters, and Biotechnology, 2001 – 2006
  • Intel Corp., 2003 – 2004

 

Selected Publications:

  1. The Stress-Induced Omega Phase Transformation in Ti-V Alloys, T. S. Kuan, R. R. Ahrens, and S. L. Sass, Metall. Trans. 6A, 1767 (1975).
  2. The Structure of a Linear Omega-Like Vacancy Defect in Zr-Nb B.C.C. Solid Solutions, T. S. Kuan and S. L. Sass, Acta Metall. 24, 1053 (1976).
  3. The Direct Imaging of a Linear Defect Using Diffuse Scattering in Zr-Nb B.C.C. Solid Solutions, T. S. Kuan and S. L. Sass, Phil. Mag. 36, 1473 (1977).
  4. Microstructure and Schottky Barrier Height of Iridium Silicides Formed on Silicon, I. Ohdomari, T. S. Kuan, and K. N. Tu, J. Appl. Phys. 50, 7020 (1979).
  5. Microscopic Compound Formation at the Pd-Si(111) Interface, J. L. Freeouf, G. W. Rubloff, P. S. Ho, and T. S. Kuan, Phys. Rev. Lett. 43, 1836 (1979).
  6. Thermal Strain in Lead Thin Films V: Strain Relaxation Above Room Temperature, M. Murakami and T. S. Kuan, Thin Solid Films 66, 381 (1980).
  7. Effect of Lubricant Environments on Saw Damage in Si Wafers, T. S. Kuan, K. K. Shih, J. A. Van Vechten, and W. A. Westdorp, J. Electrochem. Soc. 127, 1387 (1980).
  8. Strain Relaxation Mechanisms of Lead and Lead Alloy Thin Films on Silicon Substrates, M. Murakami, T. S. Kuan, and I. A. Blech, Thin Solid Films 89, 165 (1982).
  9. Structure of a Nb Oxide Tunnel Barrier in a Josephson Junction, T. S. Kuan, S. I. Raider, and R. E. Drake, J. Appl. Phys. 53, 7464 (1982).
  10. Mechanical Properties of Thin Films on Substrates, M. Murakami, T. S. Kuan, and I. A. Blech, Treatise on Materials Science and Technology, Vol. 24, Preparation and Properties of Thin Films, Chapter 5, Edited by K. N. Tu and R. Rosenberg, Academic Press, Inc., 1982, p. 163.
  11. Low Temperature Strain Behavior of Pb Thin Films on a Substrate, T. S. Kuan and M. Murakami, Metall. Trans. 13A, 383 (1982).
  12. Electron Microscope Studies of a Ge-GaAs Superlattice Grown by Molecular Beam Epitaxy, T. S. Kuan and C. A. Chang, J. Appl. Phys. 54, 4408 (1983).
  13. Characterization of Nb/Nb Oxide Structures in Josephson Tunnel Junctions, S. I. Raider, R. W. Johnson, T. S. Kuan, R. E. Drake, and R. A. Pollak, IEEE Transactions on Magnetics 19, 803 (1983).
  14. Electron Microscope Studies of an Alloyed Au/Ni/Au-Ge Ohmic Contact to GaAs, T. S. Kuan, P. E. Batson, T. N. Jackson, H. Rupprecht, and E. L. Wilkie, J. Appl. Phys. 54, 6952 (1983).
  15. Long-Range Order in AlxGa1-xAs, T. S. Kuan, T. F. Kuech, W. I. Wang, and E. L. Wilkie, Phys. Rev. Lett. 54, 201 (1985).
  16. Reactions of Pd on (100) and (110) GaAs Surfaces, T. S. Kuan, J. L. Freeouf, P. E. Batson, and E. L. Wilkie, J. Appl. Phys. 58, 1519 (1985).
  17. Evidence of Orientation Independence of Band Offset in AlGaAs/GaAs Heterostructures, W. I. Wang, T. S. Kuan, E. E. Mendez, and L. Esaki, Phys. Rev. B 31, 6890 (1985).
  18. Crystal Orientation Dependence of Silicon Doping in Molecular Beam Epitaxial AlGaAs/GaAs Heterostructures, W. I. Wang, E. E. Mendez, T. S. Kuan, and L. Esaki, Appl. Phys. Lett. 47, 826 (1985).
  19. Long-Range Order in InxGa1-xAs, T. S. Kuan, W. I. Wang, and E. L. Wilkie, Appl. Phys. Lett. 51, 51 (1987).
  20. Low-Temperature Selective Epitaxial Growth of Silicon at Atmospheric Pressure, T. O. Sedgwick, M. Berkenblit, and T. S. Kuan, Appl. Phys. Lett. 54, 2689 (1989).
  21. Growth and Properties of Thin GaAs Epitaxial Layers on Al2O3, T. F. Kuech, A. Segmuller, T. S. Kuan, and M. S. Goorsky, J. Appl. Phys., 67, 6497 (1990).
  22. Selective Growth of Silicon-Germanium Alloys by Atmospheric-Pressure Chemical Vapor Deposition at Low Temperatures, P. D. Agnello, T. O. Sedgwick, M. S. Goorsky, J. Ott, T. S. Kuan, and G. Scilla, Appl. Phys. Lett. 59, 1479 (1991).
  23. Strain Relaxation and Ordering in SiGe Layers Grown on (100), (111), and (110) Si Surfaces by Molecular-Beam Epitaxy, T. S. Kuan and S. S. Iyer, Appl. Phys. Lett. 59, 2242 (1991).
  24. Growth of Facet-Free Selective Silicon Epitaxy at Low Temperature and Atmospheric Pressure, T. O. Sedgwick, P. D. Agnello, M. Berkenblit, and T. S. Kuan, J. Electrochem. Soc. 138, 3042 (1991).
  25. Pulsed Laser Planarization of Metals for IC Interconnect, R. J. Baseman, T. S. Kuan, M. O. Aboelfotoh, J. C. Andreshak, F. E. Turene, R. A. Previti-Kelly, and J. G. Ryan, Materials Research Society Symposia Proceedings, Vol. 236, 361 (1992).
  26. Silicon Epitaxy from Silane by Atmospheric-Pressure Chemical Vapor Deposition at Low Temperatures, P. D. Agnello, T. O. Sedgwick, K. C. Bretz, and T. S. Kuan, Appl. Phys. Lett. 61, 1298 (1992).
  27. Application of Electron and Ion Beam Analysis Techniques to Microelectronics, T. S. Kuan, P. E. Batson, R. M. Feenstra, A. J. Slavin, and R. Tromp, IBM J. Res. Develop. Vol. 36, No. 2, 183-207 (1992).
  28. Molecular beam epitaxial heterostructures in the (311)A orientation, Y. Hsu, W. I. Wang and T. S. Kuan, J. Vac. Sci. Technol. B 12(4), 2584 (1994).
  29. Study of interface abruptness of molecular beam epitaxial GaAs/AlAs superlattices grown on GaAs (311) and (100) substrates, Y. Hsu, W. I. Wang, and T. S. Kuan, J. Vac. Sci. Technol. B 13, 2286 (1996).
  30. In-Situ Relaxed Si1-xGex Epitaxial Layers with Low Threading Dislocation Densities Grown on Compliant Si-On-Insulator Substrates, Z. Yang, J. Alperin, W. I. Wang, S. S. Iyer, T. S. Kuan, and F. Semendy, J. Vac. Sci. Technol. B 16(3), 1489 (1998).
  31. Fabrication of Cu Interconnects of 50 nm Linewidth by Electron-Beam Lithography and High-Density Plasma Etching, Y. Hsu, T. E. F. M. Standaert, G. S. Oehrlein, T. S. Kuan, E. Sayre, K. Rose, K. Y. Lee, and S. M. Rossnagel, J. Vac. Sci. Technol. B 16(6), 3344 (1998).
  32. Dislocation Mechanisms in the GaN Lateral Overgrowth by Hydride Vapor Phase Epitaxy, T. S. Kuan, C. K. Inoki, Y. Hsu, D. L. Harris, R. Zhang, S. Gu, and T. F. Kuech, Mat. Res. Soc. Symp. Proc. Vol. 595, W2.6.1 (2000).
  33. Fabrication and Performance Limits of Sub-0.1 m Cu Interconnects, T. S. Kuan, C. K. Inoki, G. S. Oehrlein, K. Rose, Y. –P. Zhao, G. –C. Wang, S. M. Rossnagel, and C. Cabral, Mat. Res. Soc. Symp. Proc. Vol. 612, D7.1.1 (2000).
  34. Compliant Substrates: A Comparative Study of the Relaxation Mechanisms of Strained Films Bonded to High and Low Viscosity Oxides, K. D. Hobart, F. J. Kub, M. Fatemi, M. E. Twigg, P. E. Thompson, T. S. Kuan, and C. K. Inoki, J. Electronic Materials, 29, 897 (2000).
  35. Lateral Epitaxial Overgrowth of GaSb on GaSb and GaAs Substrates by Metalorganic Chemical Vapor Deposition, S. S. Yi, D. M. Hansen, C. K. Inoki, D. L. Harris, T. S. Kuan, and T. F. Kuech, Appl. Phys. Lett. 77, 842 (2000).
  36. Mechanism of the Reduction of Dislocation Density in Epilayers Grown on Compliant Substrates, C. W. Pei, B. Turk, W. I. Wang, and T. S. Kuan, J. Apply. Phys. 12, 5959 (2001).
  37. Role of Ga Flux in Dislocation Reduction in GaN Films Grown on SiC(0001), C. D. Lee, Ashutosh Sagar, R. M. Feenstra, C. K. Inoki, T. S. Kuan, W. L. Sarney, and L. Salamanca-Riba, Appl. Phys. Lett. 79, 3428 (2001).
  38. Semiconductor Alloys, T. S. Kuan, Encyclopedia of Physical Science and Technology, Third Edition, Volume 14, 599 (2002).
  39. Strain Relaxation of SiGe Islands on Compliant Oxide, H. Yin, R. Huang, K. D. Hobart, Z. Suo, T. S. Kuan, C. K. Inoki, S. R. Shieh, T. S. Duffy, F. J. Kub, and J. C. Sturm, J. Appl. Phys. 91, 9716 (2002).
  40. Morphology and Effects of Hydrogen Etchings of Porous SiC, Ashutosh Sagar, C. D. Lee, R. M. Feenstra, C. K. Inoki, and T. S. Kuan, J. Appl. Phys. 92, 4070 (2002).
  41. Time development of microstructure and resistivity for very thin Cu films, S. M. Rossnagel and T. S. Kuan, J. Vac. Sci. Technol. A20(6), 1911 (2002).
  42. Growth of GaN films on porous SiC substrates by molecular-beam epitaxy, F. Yun, M. A. Reshchikov, L. He, H. Morkoç, C. K. Inoki, and T. S. Kuan, Appl. Phys. Lett. 81, 4142 (2002).
  43. Spin-torque transfer in batch-fabricated spin-valve magnetic nanojunctions, J. Z. Sun, D. J. Monsma, T. S. Kuan, M. J. Rooks, D. W. Abraham, B. Oezyilmaz, A. D. Kent, and R. H. Koch, J. Appl. Phys. 93, 6859 (2003).
  44. Growth of GaN on porous SiC and GaN substrates, C. K. Inoki, T. S. Kuan, C. D. Lee, Ashutosh Sagar, R. M. Feenstra, D. D. Koleske, D. J. Diaz, P. W. Bohn, and I. Adesida, J. Electronic Materials 32, 855 (2003).
  45. Plasma-assisted molecular beam epitaxy of GaN on porous SiC substrates with varying porosity, Ashutosh Sagar, C. D. Lee, R. M. Feenstra, C. K. Inoki, and T. S. Kuan, J. Vac. Sci. Technol. B21(4), 1812 (2003).
  46. Growth of GaN on porous SiC and GaN substrates, C. K. Inoki, T. S. Kuan, A. Sagar, C. D. Lee, R. M. Feenstra, D. D. Koleske, D. J. Diaz, P. W. Bohn, and I. Adesida, Phys. Stat. Sol. (a) 200(1), 44 (2003).
  47. SiGe relaxation on silicon-on-insulator substrates: An experimental and modeling study, E. M. Rehder, C. K. Inoki, T. S. Kuan, and T. F. Kuech, J. Appl. Phys. 94, 7892 (2003).
  48. Alteration of Cu conductivity in the size effect regime, S. M. Rossnagel and T. S. Kuan, J. Vac. Sci. Technol. B22(1), 240 (2004).
  49. Formation of regular arrays of submicron GaAs dots on silicon, J. D. Beach, C. Veauvy, R. Caputo, R. T. Collins, A. A. Khandekar, T. F. Kuech, C. K. Inoki, T. S. Kuan, and R. E. Hollingsworth, Appl. Phys. Lett. 84, 5323 (2004).
  50. Dislocation density reduction in GaN using porous SiN interlayers, Ashutosh Sagar, R. M. Feenstra, C. K. Inoki, T. S. Kuan, Y. Fu, Y. T. Moon, F. Yun, and H. Morkoç, Phys. Stat. Sol. (a) 202(5), 722 (2005).
  51. Reduction of threading dislocations in GaN overgrowth by MOCVD on TiN porous network templates, F. Yun, Y. Fu, Y. T. Moon, Ü. Özgür, J. Q. Xie, S. Doğan, H. Morkoç, C. K. Inoki, T. S. Kuan, L. Zhou, and D. J. Smith, Phys. Stat. Sol. (a) 202(5), 749 (2005).
  52. Efficacy of single and double SiNx interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy, F. Yun, Y.-T. Moon, Y. Fu, K. Zhu, Ü. Özgür, H. Morkoç, C. K. Inoki, T. S. Kuan, Ashutosh Sagar, and R. M. Feenstra, J. Appl. Phys. 98(12), 123502 (2005).
  53. Dislocation reduction in GaN grown on porous TiN networks by metal-organic vapor-phase epitaxy, Y. Fu, F. Yun, Y.-T. Moon, U. Ozgur, J. Q. Xie, X. F. Ni, N. Biyikli, H. Morkoç, Lin Zhou, David J. Smith, C. K. Inoki, and T. S. Kuan, J. Appl. Phys. 99(3), 033518 (2006).
  54. Damage of ultralow k materials during photoresist mask stripping process, Xuefeng Hua, Ming-shu Kuo, G. S. Oehrlein, P. Lazzeri, E. Iacob, M. Anderle, C. K. Inoki, T. S. Kuan, P. Jiang, and Wen-li Wu, J. Vac. Sci. Technol. B 24(3), 1238 (2006).
  55. Low dislocation densities and long carrier lifetimes in GaN thin films grown on a SiNx nanonetwork, J. Xie, U. Ozgur, Y. Fu, X. Ni, H. Morkoç, C. K. Inoki, T. S. Kuan, J. V. Foreman, and H. O. Everitt, Appl. Phys. Lett. 90, 041107 (2007).
  56. Step formation on hydrogen-etched 6H-SiC[0001] surfaces, S. Nie, C. D. Lee, R. M. Feenstra, Y. Ke, R. P. Devaty, W. J. Choyke, C. K. Inoki, T. S. Kuan, and Gong Gu, Surface Science, 602, 2936 (2008).
  57. Dislocation mechanisms in GaN films grown on porous substrates or interlayers, T. S. Kuan and C. K. Inoki, Chapter 8 in Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications, Editors R. M. Feenstra and C. E. C. Wood, John Wiley & Sons Ltd. pp 214 – 229 (2008).
  58. Defect reduction in epitaxial GaSb grown on nanopatterned GaAs substrates using full wafer block copolymer lithography, Smita Jha, C. -C. Liu, T. S. Kuan, S. E. Babcock, P. F. Nealey, J. H. Park, L. J. Mawst, and T. F. Kuech, Appl. Phys. Lett. 95, 062104 (2009).
  59. InAsyP1-y metamorphic buffer layers on InP substrates for mid-IR diode lasers, Jeremy Kirch, Toby Garrod, Sangho Kim, Jeo H. Park, Jae C. Shin, L. J. Mawst, T. F. Kuech, X. Song, S. E. Babcock, Igor Vurgaftman, Jerry, R. Meyer, and T. S. Kuan, J. Crystal Growth, 312, 1165 (2010).
  60. Effects of nanoscale surface roughness on the resistivity of ultrathin epitaxial copper films, Yukta P. Timalsina, Andrew Horning, Robert F. Spivey, Kim M. Lewis, T. S. Kuan, G.-C. Wang, and T.-M. Lu, Nanotechnology 26, 075704 (2015).